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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
IB2226MH160
2.25
2.55
160
9
46
200µs, 10%
34
Input & Output
P44C4
IB1011S1000
1.03
1.09
1000
10
57
10µs, 1%
50
Input
P64A6
IB1011S250
1.03
1.09
250
10
61
10µs, 1%
50
Input
P32A5
IB2729M90
2.7
2.9
90
10
51
100µs, 10%
36
Input & Output
P32A5
IB1011S70
1.03
1.09
70
10
70
10µs, 1%
50
Input
P32A5
IB2226M80
2.25
2.55
80
8
48
200µs, 10%
36
Input & Output
P32A5
IDM30512CW100
0.03
0.512
100
9
65
CW
28
None
P44I1
IB1012S1100
1.025
1.15
1100
10
50
10µs, 1%
60
Input & Output
P64A6
IB2856S250
2.856
2.856
250
11
52
12µs, 3%
40
Input & Output
P32A5
IB2934M100
2.9
3.4
100
8
40
100µs, 10%
36
Input & Output
P32A5
ILD3135M30
3.1
3.5
Radar
30
10
40
300µs, 10%
32
Input & Output
PL32A1
IB0607S100
0.653
0.687
100
13
62
20µs, 2%
50
Input
P32A5
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed