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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
ILD0912M150HV
0.96
1.215
Avionics
150
13
55
10µs, 10%
50
Input & Output
PL84A1
IB1214M32
1.2
1.4
32
11
54
100µs, 10%
40
Input
P32A5
IB0912L30
0.96
1.215
30
11
61
450µs, 15%
36
Input
P22A1
IB3134M25
3.1
3.4
25
10
45
300µs, 10%
36
Input & Output
P32C1
IB0810M12
0.87
0.99
12
8
53
300µs, 15%
36
None
P44C3
IB0810M100
0.87
0.99
100
10
69
300µs, 15%
36
Input
P44C3
ILD1011M280HV
1.03
1.09
Avionics
280
16
51
50µs, 2%
50
Input
PL84A1
IB1012S500
1.025
1.15
500
10
54
10µs, 1%
50
Input & Output
P54A5
IB1012S20
1.025
1.15
20
10
51
10µs, 1%
50
Input & Output
P64A8
IB1012S800
1.025
1.15
800
10
50
10µs, 1%
50
Input & Output
P64A6
IB1011L40
1.03
1.09
40
10
57
48x (32µs On, 18µs Off), 6.4%
48
Input
P32A5
IB2729M170
2.7
2.9
170
10
50
100µs, 10%
36
Input & Output
P32A5
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed