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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
IB0912M600
0.96
1.215
600
9
53
10µs, 10%
50
Input & Output
P64A28
ILD1011M275HV
1.03
1.09
Avionics
275
15
53
50µs, 2%
50
Input & Output
PL84A1
IB1011M660
1.03
1.09
660
11
57
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P64A2
ILD1011M160HV
1.03
1.09
Avionics
160
17
53
50µs, 2%
50
Input
PL32A1
ILD1011M1000HVE
1.03
1.09
Avionics
1000
18
55
50µs, 2%
50
Input
PL124A1
IB1011M190
1.03
1.09
190
12
75
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P32A5
IB2856S65
2.856
2.856
65
11
53
12µs, 3%
40
Input & Output
P32A5
ILD2735M120
2.7
3.5
Radar
120
10
33
300µs, 10%
32
Input & Output
PL124A1
IB3135MH75
3.1
3.5
75
9
49
100µs, 10%
36
Input & Output
P44C4
IB3134M70
3.1
3.4
70
8
50
300µs, 10%
36
Input & Output
P32A5
IB3135MH100
3.1
3.5
100
9
45
100µs, 10%
36
Input & Output
P44C4
IB1011S350
1.03
1.09
350
12
59
10µs, 1%
50
Input
P32A5
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed