RF system designers have long been limited to VED technology or 50 V SSPA for high-power systems in the 10's-100's kW range. Achieving multi-kW power levels in an equivalent solid-state design would require a large number of semiconductor RF power devices. Integra's High Voltage RF GaN/SiC is capable of realizing these higher power levels while dramatically reducing transistor count, system complexity and overall cost.

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