EL SEGUNDO, Calif.—June 21 2022 --Integra, a leading provider of innovative RF and Microwave Power solutions that help make a safer and more connected world, today announced it has begun production shipments to US and European customers of its groundbreaking 100V RF GaN technology. Tom Kole, Integra’s Vice President of Sales and Marketing, said, “In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third generation 100V RF GaN technology. It’s exciting to see Integra’s 100V RF GaN products move into production with customers as it signifies another industry first.”

Integra also announced expansion of their 100V RF GaN product portfolio with the introduction of 7 new products for avionics, directed energy, electronic warfare, radar and scientific market segments with power levels up to 5kW in a single transistor. These products incorporate Integra’s 100V RF GaN technology optimized to deliver the highest power and efficiency in a single transistor while maintaining reliable operating junction temperatures. Combined with Integra’s thermally enhanced patents and transistor design expertise, these products offer reliable operation with a MTTF of 10^7 hours. Suja Ramnath, Integra’s President and CEO, said, “Integra has spent a decade innovating, maturing and commercializing our groundbreaking 100V RF GaN technology. Building upon our 25 year heritage of semiconductor innovation, this 3rd generation 100V RF GaN continues to extend our technical and market leadership.”
Additionally, Integra’s partner Teledyne e2v HiRel is offering high reliability options for all of Integra's 100V RF GaN power devices and pallets targeted at the defense market. Brad Little, Vice President and General Manager of Teledyne e2v HiRel, said, “Our space customers can benefit from Integra’s 100V RF GaN products combined with Teledyne’s expertise and long heritage providing space RF components. These innovative products offer space payload engineers state-of-the-art power devices for insertion into their applications.”
New 100V RF GaN parts introduced:

Part Number Description Market
IGW4000 100V, Ultra-Wideband Multi Chip Module Electronic Warfare
IGN1012S2500 100V, 2.5kW L Band Directed Energy Transistor Directed Energy
IGN1030S3100 75V, 3.1kW L Band Avionics Transistor Avionics
IGN1030S3600 100V, 3.6kW L-Band Avionics Transistor Avionics
IGN1313S3600 100V, 3.6kW 1.3GHz Scientific Transistor Scientific
IGN1214M3200 75V, 3.2kW 1.2-1.4GHz, L Band Radar Transistor L-Band Radar
IGN2729M1500 100V, 1.5kW 2.7-2.9GHz, S Band Radar Transistor S-Band Radar

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