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IGNP0450M850
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Size |
|---|---|---|---|---|---|---|---|---|
IGNP0450M850 | 0.4 | 0.45 | 850 | 20 | 75 | 300µs, 10% | 50 | 3.0 x 1.72 inch |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.4
0.45
850
20
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
75
300µs, 10%
50
3.0 x 1.72 inch
IGNP0450M850 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of P band radar systems. It operates over the full 400-450 MHz frequency range. Under 300µs, 10% duty cycle pulse conditions, it supplies a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. It operates from a 50 V supply voltage.
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