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IGNP2729M800

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
IGNP2729M800
2.7
2.9
800
11
58
300µs, 10%
50
2.8 x 2.7 x 0.22 inch
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
800
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
58
300µs, 10%
50
2.8 x 2.7 x 0.22 inch

IGNP2729M800 is a 50-Ohm GaN based high power pulsed module for S-band radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. This module supplies a minimum of 800W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

GaN on SiC HEMT Technology

380W Output Power

Fully-matched to 50 Ohms

High Efficiency - up to 54%

Class AB, Bias Sequencing required

100% RF Tested under 300µs, 10% duty cycle pulse conditions

APPLICATION

S-band Radar

EXPORT STATUS

TBD

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