IB0810M100 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode at VCC=36V, this common base device supplies a minimum of 100W of peak pulse power under the conditions of 300us pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.