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IB0810M12
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB0810M12 | 0.87 | 0.99 | 12 | 8 | 53 | 300µs, 15% | 36 | None | P44C3 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.87
0.99
12
8
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
53
300µs, 15%
36
None
IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.
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