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IB0912M70
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB0912M70 | 0.96 | 1.215 | 70 | 11 | 64 | 10µs, 10% | 50 | Input & Output | P32C1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
70
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
64
10µs, 10%
50
Input & Output
IB0912M70 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under TACAN pulsing conditions and VCC=50V, this common base device supplies a minimum of 70W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
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