top of page
IB2729M170
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB2729M170 | 2.7 | 2.9 | 170 | 10 | 50 | 100µs, 10% | 36 | Input & Output | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
170
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100µs, 10%
36
Input & Output
IB2729M170 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 170 W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
bottom of page