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IDM500CW200

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IDM500CW200
0.001
0.5
200
10
63
CW
28
None
P44I1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.001
0.5
200
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
63
CW
28
None

IDM500CW200 is a high power transistor designed for Sub-1 GHz systems operating at 0.001 - 0.5 GHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon VDMOS

Matched to 50-ohms

200W Output Power

100% High Power RF Tested

CW Conditions

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

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