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IDM500CW300

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IDM500CW300
0.001
0.5
300
9
65
CW
28
None
P44I1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.001
0.5
300
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
CW
28
None

IDM500CW300 is a high power transistor designed for Sub-1 GHz systems operating at 0.001 - 0.5 GHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon VDMOS

Matched to 50-ohms

300W Output Power

100% High Power RF Tested

CW Conditions

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

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