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ILD1012S500HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1012S500HV | 1.025 | 1.15 | 500 | 16 | 49 | 10µs, 1% | 50 | Input & Output | PL84A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.025
1.15
500
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
49
10µs, 1%
50
Input & Output
ILD1012S500HV is a high power LDMOS transistor designed for avionics DME systems operating at 1.025 - 1.150 GHz. Operating at 10µs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
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