top of page
ILD2933M130
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
ILD2933M130 | 2.9 | 3.3 | 130 | 11 | 45 | 300µs, 10% | 32 | Input & Output | PL84A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.3
130
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
300µs, 10%
32
Input & Output
ILD2933M130 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.9 - 3.3 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 130 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
bottom of page