top of page
IB1011M1100
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1011M1100 | 1.03 | 1.09 | 1100 | 9 | 44 | 32µs, 2% | 60 | Input & Output | P64A6 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
1100
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
44
32µs, 2%
60
Input & Output
IB1011M1100 is a high power pulsed transistor designed for TCAS avionics systems operating at 1.03 and 1.09 GHz. While operating in Class C mode under 32µs, 2%, at VCC = 60V, this common base device supplies a minimum of 1100 W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
bottom of page