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IB1011M350

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IB1011M350
1.03
1.09
350
11
72
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P32A5
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
350
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
72
128x (0.5µs On, 0.5µs Off), 1%
50
Input

IB1011M350 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 350W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

350W Output Power

100% Device RF Screening

Class C Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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