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IB1012S1100
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1012S1100 | 1.025 | 1.15 | 1100 | 10 | 50 | 10µs, 1% | 60 | Input & Output | P64A6 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.025
1.15
1100
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
10µs, 1%
60
Input & Output
IB1012S1100 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.025 to 1.150 GHz. While operating in Class C mode under DME pulse conditions at VCC=60V, this common base device supplies a minimum of 1100W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
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