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IB2226MH160
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB2226MH160 | 2.25 | 2.55 | 160 | 9 | 46 | 200µs, 10% | 34 | Input & Output | P44C4 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.25
2.55
160
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
46
200µs, 10%
34
Input & Output
IB226MH160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. This device is rated for a peak output power level of PPEAK = 160W @ 10% duty factor. This corresponds to an average power PAVG = 16W.
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