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IB2856S250

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IB2856S250
2.856
2.856
250
11
52
12µs, 3%
40
Input & Output
P32A5
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.856
2.856
250
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
52
12µs, 3%
40
Input & Output

IB2856S250 is a high power pulsed transistor designed to operate in Class C mode in ISM/Medical systems. This common base device supplies a minimum of 250W of peak pulse power under the conditions of 12µs pulse width and 3% duty cycle. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

250W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Technology

EXPORT STATUS

EAR99

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