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IB3134M100
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
IB3134M100 | 3.1 | 3.4 | 100 | 10 | 42 | 300µs, 10% | 36 | Input & Output | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.4
100
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
42
300µs, 10%
36
Input & Output
![](https://static.wixstatic.com/media/3748d3_8a7e06c0da2a4863873b2c276ff4f129~mv2.png/v1/fill/w_480,h_270,al_c,q_85,usm_0.66_1.00_0.01,enc_auto/Image-empty-state.png)
IB3134M100 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.4 GHz. While operating in Class C mode this common base device supplies a minimum of 100 W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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