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IB3135MH75
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB3135MH75 | 3.1 | 3.5 | 75 | 9 | 49 | 100µs, 10% | 36 | Input & Output | P44C4 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
75
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
49
100µs, 10%
36
Input & Output
IB3135MH75 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.5 GHz. While operating in Class C mode this common base device supplies a minimum of 75 W of peak pulse power under the conditions of 150us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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