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IDM175CW300

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IDM175CW300
0.001
0.2
300
15
57
CW
50
None
P44I5
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.001
0.2
300
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
57
CW
50
None

IDM175CW300 is a high power silicon transistor designed for Sub-1 GHz systems operating at 0.001 - 0.2 GHz. Operating at CW conditions, this device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon VDMOS

Matched to 50-ohms

300W Output Power

100% High Power RF Tested

CW Conditions

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

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