top of page
ILD1214M60
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1214M60 | 1.2 | 1.4 | 60 | 14 | 48 | 300µs, 10% | 30 | Input & Output | PL44B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
60
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
48
300µs, 10%
30
Input & Output
ILD1214M60 is a high power LDMOS transistor designed for the frequency band 1.215 - 1.400 GHz. Operating 3at 300us-10% pulse conditions this LDMOS FET device supplies a minimum of 60W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
bottom of page