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ILD2731M140
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD2731M140 | 2.7 | 3.1 | 140 | 13 | 45 | 300µs, 10% | 32 | Input & Output | PL64A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
140
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
300µs, 10%
32
Input & Output
ILD2731M140 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 140 W of peak output power. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
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