top of page
ILD2731M60
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD2731M60 | 2.7 | 3.1 | 60 | 11 | 43 | 300µs, 10% | 32 | Input & Output | PL32A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
60
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
43
300µs, 10%
32
Input & Output
ILD2731M60 is high power LDMOS transistor designed for S-band radar applicaitons operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us/20% pulsing conditions, it easily supplies a minimum of 60W of peak output power with 32V drain bias. Specified operation is with Class AB bias. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
bottom of page