Consider us your support team for your high power amplifier (HPA) design
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Finding your power can be challenging when the RF power design questions can be as elusive as the answers. That's why Integra is ready around the clock to help you with the application engineering of high power amplifier (HPA) designs. We've seen and resolved challenges in every HPA design approach imaginable, and can help you avoid the engineering pitfalls we've seen before. So call us or send us your questions, and let us know what's holding you back from finding your power.
Helpful product links:
Silicon RF Power Transistors, GaN-on-SiC RF Power Transistors, 50-Ohm RF Power Transistors, Next Gen RF Power Amplifier Modules/Pallets
Call Us: 310-606-0855 x131
Resources
Published Articles and Technical Briefs
Application Notes
Company and Quality Information
An Alternative to Using MMICs for T/R Module Manufacture
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A UHF 1-kW Solid-State Power Amplifier for Spaceborne SAR
GaN Power Amplifier for 100V DC Bus in GPS L-band
Quest for Vacuum Tubes' Replacement - 150V UHF GaN Radar Transistors
Recent Advances in kW-level Pulsed GaN Transistors with Very High Efficiency
Solid-State Transmitters for IFF and SSR Systems
RF Burn-in Analysis of 100V P-band Aerospace GaN Radar Transistors
Analysis of a GaN/SiC UHF Radar Amplifier for Operation at 125V Bias
Implications of Using kW-level GaN Transistors in Radar and Avionic Systems
A 100W Decade Bandwidth, High-Efficiency GaN Amplifier
A 130W LDMOS for 2.7-3.5 GHz Broadband Radar Applications
1KW GaN S-band Radar Transistor
RF LDMOS Technology for pulsed L-band Transmitters
Advances in S-Band Radar Technology
Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications
High Power RF/Microwave Transistors, Pallets and Amplifiers
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Solid-State RF Power Amplifiers for ISM CW Applications Based on 100V GaN Technology
Application Note 001: Measurement of Peak Pulse Power and Droop
Application Note 002: Handling and Adjustment of Integra Technologies GaN-on-SiC HEMT Evaluation Kits
Application Note 003: Transistor Installation Instructions
Application Note 004: Automatic & Fail-Safe Biasing of GaN Transistors
Application Note 005: Handling and Adjustment of Integra Technologies LDMOS Evaluation Kits
Application Note 006: Handling and Adjustment of Integra Technologies Bipolar Transistor Evaluation Kits
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Application Note 008: Handling and Adjustment of
Integra Technologies GaN-on-SiC Pallets
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Application Note 009: Pin and Socket Pallets
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Application Note 012: Effect of Tolerances on Microstrip Impedance and Power Output
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Application Note 013: Advantages of IGT1011S150 versus Two Separate Gain Stages
