Here when you need us
Consider us your support team for your radar's high power amplifier (HPA) design.
Finding your power can be challenging when the RF power design questions can be as elusive as the answers. That's why Integra is ready around the clock to help you with the application engineering of high power amplifier (HPA) designs. We've seen and resolved challenges in every HPA design approach imaginable, and can help you avoid the engineering pitfalls we've seen before. So call us or send us your questions, and let us know what's holding you back from finding your power.
Helpful product links:
Legacy RF Power Transistors, Latest RF Power Transistors, 50-Ohm RF Power Transistors, Next-Gen RF Power Amplifier Modules/Pallets
Call Us: 310-606-0855 x131
Let's Keep You Updated
Some of the technical content on our site requires one-time registration before downloading. By providing us a few details now, and keeping cookies turned on, you’ll then be free to download all our content at any time. We’ll also send you periodic email alerts as we add more of this valuable content, and new products, to our website.
Resources
Published Articles
- An Alternative to Using MMICs for T/R Module Manufacture
- A UHF 1-kW Solid-State Power Amplifier for Spaceborne SAR
- GaN Power Amplifier for 100VDC Bus in GPS L-band
- Quest for Vacuum Tubes' Replacement - 150V UHF GaN Radar Transistors
- Recent Advances in kW-level Pulsed GaN Transistors with Very High Efficiency
- Solid-State Transmitters for IFF and SSR Systems
- RF Burn-in Analysis of 100V P-band Aerospace GaN Radar Transistors
- Analysis of a GaN/SiC UHF Radar Amplifier for Operation at 125V Bias
- Implications of Using kW-level GaN Transistors in Radar and Avionic Systems
- A 100W Decade Bandwidth, High-Efficiency GaN Amplifier
- A 130W LDMOS for 2.7-3.5 GHz Broadband Radar Applications
- 1KW GaN S-band Radar Transistor
- RF LDMOS Technology for pulsed L-band Transmitters
- Advances in S-Band Radar Technology
- Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications
- High Power RF/Microwave Transistors, Pallets and Amplifiers
Tech Briefs/Application Notes
- Tech Brief: Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs
- Application Note: Mixed-Mode Class E-Inverse F High Efficiency GaN Power Amplifier for P-band Space Applications
- Application Note: High Efficiency Switch Mode GaN Based Power Amplifiers for P-band Aerospace Applications
- Application Note 001: Measurement of Peak Pulse Power and Droop
- Application Note 002: Handling and Adjustment of Integra Technologies GaN-on-SiC HEMT Evaluation Kits
- Application Note 003: Transistor Installation Instructions
- Application Note 004: Automatic & Fail-Safe Biasing of GaN Transistors
- Application Note 005: Handling and Adjustment of Integra Technologies LDMOS Evaluation Kits
- Application Note 006: Handling and Adjustment of Integra Technologies Bipolar Transistor Evaluation Kits
Quality & Company Information
-
ISO Certificate RC-RVA
-
ISO Certificate ANAB
- EU RoHS Statement
- Presentation: High Power GaN Transistors
- Company Quality Policy
- ISO Certificate
- Reach Statement
- Solid-State RF Power Amplifiers for ISM CW Applications Based on 100V GaN Technology
- 150V-Bias RF GaN for 1KW UHF Radar Amplifiers
- Integras New RF High Power Product Selection Guide
Tech Brief Describes How to Choose the Best RF Power Transistor
The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, and weather-radar applications, start with the right choice of discrete or integrated RF power transistors.
