Integra Technologies announced today it has been awarded a two-year contract by the U.S. Air Force to accelerate technology and manufacturing readiness of its patented, Thermally-Enhanced GaN/SiC technology. Integra’s GaN/SiC technology is ideal for high efficiency, solid-state RF power applications including high power radar systems requiring improved performance, increased range and reduced operating costs.
The Company has developed its Thermally Enhanced GaN/SiC to deliver superior power and efficiency while operating at lower temperatures which is a key enabler of next generation high performance radar platforms. The Company is leveraging its domestic R&D and manufacturing platform to optimize the GaN epitaxial wafer, device design and package design. Additionally, the U.S. Air Force contract will enable robust qualification of Integra’s Thermally Enhanced GaN/SiC for production.
"We are excited to work with the Air Force," said Suja Ramnath, President and CEO of Integra Technologies. “Through this effort, we have the opportunity to commercialize our leap-ahead GaN/SiC technology to meet the high efficiency performance and production readiness requirements of the U.S. Department of Defense.”
Founded in 1997, Integra is a leading provider of RF and Microwave power semiconductor and pallet solutions for mission-critical applications including state-of-the-art radar, electronic warfare and advanced communications systems.