We are excited to attend this years European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain.
At EuMW, Integra will showcase our newly released high power GaN-on-SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, this device is best suited for C-band CW radar applications. This transistor is fully-matched to 50-ohms, and offers instantaneous operating frequency range, a minimum of 25W of output power, and 36V of drain bias.
Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Stop by booth # 308/309 to chat with our sales representative, Trilight about our high power capabilities and our line of new high-power X-band devices to be released in 2019.